WNM2030-3 Description
The WNM2030-3/TR-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit.
WNM2030-3 Key Features
- 20V, RDS(ON)=125mΩ(Typ.) @ VGS=4.5V RDS(ON)=190mΩ(Typ.) @VGS=2.5V
- High density cell design for low RDS(on)
- Material: Halogen free
- Reliable and rugged
- Avalanche Rated
- Low leakage current