WNM2030-3 - N-channel MOSFET

General Description

The WNM2030-3/TR-ES is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced technology and design to provide excellent RDS(ON) with low gate charge.

Device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

20V, RDS(ON)=125mΩ(Typ. ) @ VGS=4.5V RDS(ON)=190mΩ(Typ. ) @VGS=2.5V.
High density cell design for low RDS(on).
Material: Halogen free.
Reliable and rugged.
Avalanche Rated.
Low leakage current 3.

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WNM2030-3 n-channel mosfet by ElecSuper - Datasheet Preview

Datasheet Details

Part number	WNM2030-3
Manufacturer	ElecSuper
File Size	731.80 KB
Description	N-channel MOSFET
Datasheet	WNM2030-3 Datasheet

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WNM2030-3/TR-ES Rev-1.2 www.elecsuper.com SuperMOS – SOT-723 20V BVDSS, 125mΩ RDS(ON), N-channel MOSFET 1. Description The WNM2030-3/TR-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2030-3/TR-ES is Pb-free. 2. Features  20V, RDS(ON)=125mΩ(Typ.) @ VGS=4.5V RDS(ON)=190mΩ(Typ.) @VGS=2.5V  High density cell design for low RDS(on)  Material: Halogen free  Reliable and rugged  Avalanche Rated  Low leakage current 3. Applications  PWM applications  Load switch  Power management in portable/desktop PCs  DC/DC conversion 4.