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MRF-261 - High Band VHF FM Power Transistor

Download the MRF-261 datasheet PDF. This datasheet also covers the MRF261 variant, as both devices belong to the same high band vhf fm power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

MRF261 is designed as 10W, 5.2dB, 12.5V, 136-175MHz, TO220 high band/VHF FM transistors.

Maximum Ratings at TU = 25 Symbol BVCES BVCEO BVEBO IC Ptot TSTG TjM Data at TU = 25 Symbol Pout GP ( VCC =12.5 V f=175 MHz ) Test Conditions Test Conditions IC=10 mA IC=30 mA IE=5 mA Characteristics Max.

Max.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF261_Eleflow.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRF-261
Manufacturer Eleflow
File Size 73.35 KB
Description High Band VHF FM Power Transistor
Datasheet download datasheet MRF-261 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ELEFLOW www.DataSheet4U.com www.eleflow.com TECHNOLOGIES MRF261 High band/VHF FM power transistor MRF261 Description: MRF261 is designed as 10W, 5.2dB, 12.5V, 136-175MHz, TO220 high band/VHF FM transistors. Maximum Ratings at TU = 25 Symbol BVCES BVCEO BVEBO IC Ptot TSTG TjM Data at TU = 25 Symbol Pout GP ( VCC =12.5 V f=175 MHz ) Test Conditions Test Conditions IC=10 mA IC=30 mA IE=5 mA Characteristics Max. Max. Max. Max. Max. Min. Max. Max. 36 18 4 2 30 -65 150 175 Units V V V A W Characteristics Typ. Typ. Typ. 10 10 60 45 1 1 50 Units W dB % hFE VCEsat ICES CCBO IC = 0.5A VCE =5V Typ. Max. Max. Typ. IC =0.5A IB =0.