MEF64M16G150M3ND Datasheet | Elisra

MEF64M16XX50X3ND 1024Mbit 3.3V - NAND Flash Memory Module 64MX16 3.3V NAND Flash Memory Module Features q 3.3V±10% Supply/ Programming q Access Time: 50ns (Page Read) q Fast Page Write Cycle Time (200u Sec ) q Package type: 66-Pin Ceramic PGA 1.385” SQ 66-Pin Ceramic PGA 1.080” SQ q 60m A typical erase/program current q 60m A active read current q Embedded Program/Erase Algorithms q Industrial & Military Screening q 100,000 Erase/Program Cycles Product Description The MEF64M16ND is a 1024Megabit 3.3V NAND flash memory MCM, assembled in multilayered cofired ceramic package, designed for low noise and better ground bounce. Flowcharts of programming, byte write, block erase and other specifications are identical to “K9K1G08U0A" specifications and should be used as a reference. Block Diagram Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: microel@elisra. May 2004, Rev. D 1 OF 42 MEF64M16XX50X3ND 1024Mbit 3.3V - NAND Flash Memory Module Pin...