Datasheet4U Logo Datasheet4U.com

M24L16161ZA - 16-Mbit (1M x 16) Pseudo Static RAM

General Description

of read and write modes.

To enable Deep Sleep Mode, drive ZZ LOW.

See the Truth Table for a complete description of Read, Write, and Deep Sleep mode.

Key Features

  • ‧Wide voltage range: 2.2V.
  • 3.6V.
  • Access Time: 70 ns.
  • Ultra-low active power.
  • Typical active current: 3 mA @ f = 1 MHz.
  • Typical active current: 18 mA @ f = fmax.
  • Ultra low standby power.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Deep Sleep Mode.
  • Offered in a Lead-Free 48-ball BGA package.
  • Operating Temperature:.
  • 40°C to +85°C www. DataSheet4U. com M24L16161ZA 16-Mbit (1.

📥 Download Datasheet

Datasheet Details

Part number M24L16161ZA
Manufacturer Elite Semiconductor Memory Technology
File Size 413.33 KB
Description 16-Mbit (1M x 16) Pseudo Static RAM
Datasheet download datasheet M24L16161ZA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161ZA Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/15 ESMT PSRAM Features ‧Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power— Typical active current: 3 mA @ f = 1 MHz— Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power • Deep Sleep Mode • Offered in a Lead-Free 48-ball BGA package • Operating Temperature: –40°C to +85°C www.DataSheet4U.com M24L16161ZA 16-Mbit (1M x 16) Pseudo Static RAM are disabled ( OE HIGH), both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW).