M24L816512DA Datasheet | Elite Semiconductor Memory Technology

ESMT PSRAM Features ‧Advanced low-power architecture - High speed: 55 ns, 70 ns - Wide voltage range: 2.7V to 3.6 V - Typical active current: 2 mA @ f = 1 MHz - Typical active current: 11 mA @ f = fMAX - Low standby power - Automatic power-down when deselected .. M24L816512DA 8-Mbit (512K x 16) Pseudo Static RAM Functional Description The M24L816512DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 512K words by 16 bits that supports an asynchronous memory interface. This device Features advanced circuit design to provide ultra-low active current. This is ideal for portable applications such as cellular telephones. The device can be put into standby...