Datasheet4U.com

13001 Datasheet PDF

Elite 13001

NPN Epitaxial Silicon Transistor

Part No. 13001
Datasheet 13001 Download
Manufacturer
Elite
Description NPN Epitaxial Silicon Transistor
Buy Stock & Price
13001 datasheet page 1 preview

FEATURES

Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126

ABSOLUTE MAXIMUM RATINGS

(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 200 1000 150 -55~+150 Unit V V V mA mW o o C C 1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS

(TA=25oC) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-emitter Voltage Transition Frequency Fall Time Storage Time Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE ff tf ts Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=600V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE=20V,...