Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW
TO-126
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 200 1000 150 -55~+150 Unit V V V mA mW
o o
C C
1. Emitter
2. Collector
3. Base
Electrical Characteristics (TA=25oC)
Characteristic Collector-Base Breakdown.
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13001 NPN Epitaxial Silicon Transistor
Features
Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW
TO-126
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 200 1000 150 -55~+150 Unit V V V mA mW
o o
C C
1. Emitter
2. Collector
3.
13001 Datasheet