S9015LT1
S9015LT1 PNP Epitaxial Silicon Transistor
LOW FREQUENCY, LOW NOISE AMPLIFIER
SOT-23
Collector-Emitter Voltage: VCEO= -45V Collector Dissipation: PC=200m W
Absolute Maximum Ratings (TA=25o C)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC TJ TSTG
-50 -45 -5 -100 200 150 -55~+150
V V V m A m W o C o C
Tolerance : 0.1mm Dimensions (Unit : mm)
1. Emitter 2. Base 3. Collector
Electrical Characteristics (TA=25o C)
Characteristic
Symbol
Test Conditions
Min Max Unit
Collector-Base Breakdown Voltage
BVCBO IC= -100µA, IE= 0
-50
Collector-Emitter Breakdown Voltage
BVCEO IC= -1m A, IB= 0
-45
Emitter-Base Breakdown Voltage
BVEBO IE= -100µA, IC= 0
-5 -0.05 V
Collector Cut-off Current
ICBO VCB= -50V, IE= 0
-0.05
µA
Emitter Cut-off Current
IEBO VEB= -5V, IC= 0
µA
DC Current Gain h FE VCE= -5V, IC= -1m A
200...
