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M13L128168A - DDR SDRAM

Features

  • z z z z z z z z z z z z z z z z z z z z M13L128168A 2M x 16 Bit x 4 Banks Double Data Rate SDRAM JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe(DQS) On-chip DLL Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition Quad bank operation CAS Latency : 2, 3 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8 All inputs except data & DM are sampled at the rising edge of the.

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Datasheet Details

Part number M13L128168A
Manufacturer EliteMT
File Size 864.84 KB
Description DDR SDRAM
Datasheet download datasheet M13L128168A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Revision History Revision 1.3 -Revise operation voltage. (page 5) Revision 1.2 -Changed tWTR from 1 tCK to 2 tCK. Revision 1.1 -Changed absolute max. voltage (VIN, VOUT ,VDD ,VDDQ) from 3.6V to 4.0V Parameter Voltage on any pin relative to VSS Voltage on VDD supply relative to VSS Voltage on VDDQ supply relative to VSS Symbol VIN, VOUT VDD VDDQ Value -0.5 ~ 4.0 -1.0 ~ 4.0 -0.5 ~ 4.0 Unit V V V M13L128168A -Changed operating VDD from 3.135V~3.6V to 3.135V~3.83V -Updated DC current specification Revision 1.0 (21 Oct. 2002) -No “preliminary” on title. -Added M13L128168A-3.6T Spec. -Changed VDDQ from 2.5V ± 5% to 2.375V ~ 2.8V Revision 0.4 (26 Sep. 2002) -Changed VDD from 3.3V ± 5% to 3.135V ~ 3.6V -Changed operating temperature from 70 °C to 65 °C Revision 0.3 (11 Jul.
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