EBE10RD4AEFA Overview
The EBE10RD4AEFA is a 128M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 4bits prefetch-pipelined architecture.
EBE10RD4AEFA Key Features
- 240-pin socket type dual in line memory module (DIMM) PCB height: 30.0mm Lead pitch: 1.0mm Lead-free
- Power supply: VDD, VDDQ = 1.8V ± 0.1V
- Data rate: 533Mbps/400Mbps (max.)
- SSTL_18 patible I/O
- Double-data-rate architecture: two data transfers per clock cycle
- Bi-directional, data strobe (DQS and /DQS) is transmitted /received with data, to be used in capturing data at the recei
- DQS is edge aligned with data for READs; center aligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge; data referenced to both edges of DQS