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DATA SHEET
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1GB DDR2 SDRAM SO-DIMM
EBE10UE8AFSA (128M words × 64 bits, 1 Rank)
Specifications
• Density: 1GB • Organization 128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in line memory module (SO-DIMM) PCB height: 30.0mm Lead pitch: 0.6mm Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD = 1.8V ± 0.1V • Data rate: 800Mbps/667Mbps (max.) • Eight internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5, 6 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.