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EBE21FD4AGFN - 2GB Fully Buffered DIMM

Download the EBE21FD4AGFN datasheet PDF. This datasheet also covers the EBE21FD4AGFD variant, as both devices belong to the same 2gb fully buffered dimm family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • JEDEC standard Raw Card E Design.
  • Industry Standard Advanced Memory Buffer (AMB).
  • High-speed differential point-to-point link interface at 1.5V (JEDEC draft spec)  14 north-bound (NB) high speed serial lanes  10 south-bound (SB) high speed serial lanes.
  • Various features/modes:  MemBIST and IBIST test functions  Transparent mode and direct access mode for DRAM testing  Interface for a thermal sensor and status indicator.
  • Channel error detection a.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EBE21FD4AGFD_ElpidaMemory.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EBE21FD4AGFN
Manufacturer Elpida Memory
File Size 235.38 KB
Description 2GB Fully Buffered DIMM
Datasheet download datasheet EBE21FD4AGFN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY DATA SHEET www.DataSheet4U.com 2GB Fully Buffered DIMM EBE21FD4AGFD EBE21FD4AGFN Specifications • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm  Advanced Memory Buffer (AMB): 655-ball FCBGA  Lead-free (RoHS compliant) • Power supply  DDR2 SDRAM: VDD = 1.8V ± 0.1V  AMB: VCC = 1.5V + 0.075V/−0.045 • Data rate: 667Mbps/533Mbps (max.