EBE21UE8AADA Description
The EBE21UE8AADA is 256M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 1G bits DDR2 SDRAM with sFBGA stacking technology. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 4 bits prefetch-pipelined architecture.
EBE21UE8AADA Key Features
- 200-pin socket type small outline dual in line memory module (SO-DIMM) PCB height: 30.0mm Lead pitch: 0.6mm Lead-f
- Power supply: VDD = 1.8V ± 0.1V
- Data rate: 533Mbps/400Mbps (max.)
- SSTL_18 patible I/O
- Double-data-rate architecture: two data transfers per clock cycle
- Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data
- DQS is edge aligned with data for READs: centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge: data and data mask referenced to both edges of DQS