EBE41AF4A1QB Description
PRELIMINARY DATA SHEET .. 4GB VLP Registered DDR2 SDRAM DIMM EBE41AF4A1QB (512M words × 72 bits, 2 Ranks) Specifications Density: 4GB Organization 512M words × 72 bits, 2 ranks Mounting 18 pieces of 2G bits DDR2 SDRAM with DDP (FBGA) DDP:.
EBE41AF4A1QB Key Features
- Double-data-rate architecture; two data transfers per clock cycle
- The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
- Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the recei
- DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge; data referenced to both edges of DQS
- Posted /CAS by programmable additive latency for better mand and data bus efficiency
- Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality
- /DQS can be disabled for single-ended Data Strobe operation