EBE51ED8AEFA-6 Overview
The EBE51ED8AEFA is 64M words × 72 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 4 bits prefetchpipelined architecture.
EBE51ED8AEFA-6 Key Features
- 240-pin socket type dual in line memory module (DIMM) PCB height: 30.0mm Lead pitch: 1.0mm Lead-free (RoHS pliant)
- Power supply: VDD = 1.8V ± 0.1V
- Data rate: 667Mbps (max.)
- SSTL_18 patible I/O
- Double-data-rate architecture: two data transfers per clock cycle
- Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data
- DQS is edge aligned with data for READs: centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge: data and data mask referenced to both edges of DQS