Datasheet Summary
PRELIMINARY DATA SHEET
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512MB Fully Buffered DIMM
EBE51FD8AGFD EBE51FD8AGFN
Specifications
- Density: 512MB
- Organization 64M words × 72 bits, 1 rank
- Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA
- Package 240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm Advanced Memory Buffer (AMB): 655-ball FCBGA Lead-free (RoHS pliant)
- Power supply DDR2 SDRAM: VDD = 1.8V ± 0.1V AMB: VCC = 1.5V + 0.075V/- 0.045
- Data rate: 667Mbps/533Mbps (max.)
- Four internal banks for concurrent operation (ponents)
- Interface: SSTL_18
- Burst lengths (BL): 4, 8
- /CAS Latency (CL): 3, 4, 5
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