Datasheet Summary
PRELIMINARY DATA SHEET
1G bits DDR Mobile RAM
WTR (Wide Temperature Range) EDD10321BBH-TS (32M words × 32 bits)
Specifications
- Density: 1G bits
- Organization: 8M words × 32 bits × 4 banks
- Package: 90-ball FBGA Lead-free (RoHS pliant) and Halogen-free
- Power supply: VDD, VDDQ = 1.7V to 1.95V
- Data rate: 400Mbps/333Mbps (max.)
- 4KB page size Row address: A0 to A12 Column address: A0 to A9
- Four internal banks for concurrent operation
- Interface: LVCMOS
- Burst lengths (BL): 2, 4, 8
- Burst type (BT): Sequential (2, 4, 8) Interleave (2, 4, 8)
- /CAS Latency (CL): 3
- Precharge: auto precharge option for each burst access
- Driver strength: normal, 1/2, 1/4
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