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PRELIMINARY DATA SHEET
1G bits DDR Mobile RAM
WTR (Wide Temperature Range) EDD10321BBH-TS (32M words × 32 bits)
Specifications
• Density: 1G bits • Organization: 8M words × 32 bits × 4 banks • Package: 90-ball FBGA Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.7V to 1.95V • Data rate: 400Mbps/333Mbps (max.) • 4KB page size Row address: A0 to A12 Column address: A0 to A9 • Four internal banks for concurrent operation • Interface: LVCMOS • Burst lengths (BL): 2, 4, 8 • Burst type (BT): Sequential (2, 4, 8) Interleave (2, 4, 8) • /CAS Latency (CL): 3 • Precharge: auto precharge option for each burst
access
• Driver strength: normal, 1/2, 1/4 • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms Average refresh period: 7.