• Part: EDE1116AJBG
  • Description: 1G bits DDR2 SDRAM
  • Manufacturer: Elpida Memory
  • Size: 537.89 KB
Download EDE1116AJBG Datasheet PDF
Elpida Memory
EDE1116AJBG
Features - Double-data-rate architecture; two data transfers per clock cycle - The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture - Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver - DQS is edge-aligned with data for READs; centeraligned with data for WRITEs - Differential clock inputs (CK and /CK) - DLL aligns DQ and DQS transitions with CK transitions - mands entered on each positive CK edge; data and data mask referenced to both edges of DQS - Data mask (DM) for write data - Posted /CAS by programmable additive latency for better mand and data bus efficiency - Programmable RDQS, /RDQS output for making × 8 organization patible to × 4 organization - /DQS, (/RDQS) can be disabled for single-ended Data Strobe operation - Off-Chip Driver (OCD) impedance adjustment is not supported. - Refresh cycles: 8192 cycles/64ms  Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.9µs at...