EDE5108AGBG Overview
DATA SHEET 512M bits DDR2 SDRAM EDE5108AGBG (64M words × 8 bits) Specifications Density: 512M bits Organization ⎯ 16M words × 8 bits × 4 banks Package: ⎯ Lead-free (RoHS pliant) Power supply:.
EDE5108AGBG Key Features
- Double-data-rate architecture; two data transfers per clock cycle
- The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
- Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the recei
- DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Data mask (DM) for write data
- Posted /CAS by programmable additive latency for better mand and data bus efficiency
- Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality