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EDJ4216EFBG - 256M words x 16 bits 4G bits DDR3L SDRAM

This page provides the datasheet information for the EDJ4216EFBG, a member of the EDJ4204EFBG 256M words x 16 bits 4G bits DDR3L SDRAM family.

Datasheet Summary

Features

  • Double-data-rate architecture: two data transfers per clock cycle.
  • The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture.
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver.
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transi.

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Datasheet preview – EDJ4216EFBG

Datasheet Details

Part number EDJ4216EFBG
Manufacturer Elpida Memory
File Size 392.78 KB
Description 256M words x 16 bits 4G bits DDR3L SDRAM
Datasheet download datasheet EDJ4216EFBG Datasheet
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Full PDF Text Transcription

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COVER PRELIMINARY DATA SHEET 4G bits DDR3L SDRAM EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 bits) Specifications • Density: 4G bits • Organization — 128M words × 4 bits × 8 banks (EDJ4204EFBG) — 64M words × 8 bits × 8 banks (EDJ4208EFBG) — 32M words × 16 bits × 8 banks (EDJ4216EFBG) • Package — 78-ball FBGA (EDJ4204EFBG, EDJ4208EFBG) — 96-ball FBGA (EDJ4216EFBG) — Lead-free (RoHS compliant) and Halogen-free • Power supply: 1.35V (typ) — VDD = 1.283V to 1.45V — Backward compatible for VDD, VDDQ = 1.5V ± 0.
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