EDS2516APSA - 256M bits SDRAM

Description

The EDS2508AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks.

The EDS2516AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks.

All inputs and outputs are referred to the rising edge of the clock input.

Features

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3.3V power supply Clock frequency: 133MHz (max. ) LVTTL interface Single pulsed /RAS 4 banks can operate simultaneously and independently.
Burst read/write operation and burst read/single write operation capability.
Programmable burst length (BL): 1, 2, 4, 8, full page.
2 variations of burst sequence  Sequential (BL = 1, 2, 4, 8)  Interleave (BL = 1, 2, 4, 8).
Programmable /CAS latency (CL): 2, 3.
Byte cont.

Elpida Memory

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Datasheet Details

Part number	EDS2516APSA
Manufacturer	Elpida Memory
File Size	554.71 KB
Description	256M bits SDRAM
Datasheet	EDS2516APSA Datasheet
Additional preview pages of the EDS2516APSA datasheet.

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DATA SHEET 256M bits SDRAM EDS2508APSA (32M words × 8 bits) EDS2516APSA (16M words × 16 bits) Description The EDS2508AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 60-ball µBGA. Pin Configurations /xxx indicates active low signal. 1 A VSS DQ15 (DQ7)* DQ0 VDD 2 3 4 5 6 B DQ14 VSSQ (NC)* VDDQ DQ1 (NC)* DQ2 (DQ1)* Features • • • • • 3.3V power supply Clock frequency: 133MHz (max.

Published: Apr 23, 2005 |