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HM51W17805 - 16M EDO DRAM

Key Features

  • E0155H10 (Ver. 1.0) (Previous ADE-203-631D (Z)) Jun. 27, 2001 The HM51W 17805 is a C MOS dynamic R AM orga nized 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM51W 17805 off ers Extende d Da ta Out (ED O) P age Mode as a high spee d ac ce ss mode. Multiplexe d addr ess input per mits the HM51W 17805 to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
  • Single 3.3 V (±0.3 V).
  • Access time: 50 ns.

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Datasheet Details

Part number HM51W17805
Manufacturer Elpida Memory
File Size 555.20 KB
Description 16M EDO DRAM
Datasheet download datasheet HM51W17805 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM51W17805 Series 16 M EDO DRAM (2-Mword × 8-bit) 2 k Refresh EO Description Features E0155H10 (Ver. 1.0) (Previous ADE-203-631D (Z)) Jun. 27, 2001 The HM51W 17805 is a C MOS dynamic R AM orga nized 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM51W 17805 off ers Extende d Da ta Out (ED O) P age Mode as a high spee d ac ce ss mode. Multiplexe d addr ess input per mits the HM51W 17805 to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP. • Single 3.3 V (±0.3 V) • Access time: 50 ns/60 ns/70 ns (max) • Power dissipation  Active mode: 396 mW/360 mW/324 mW (max)  Standby mode : 7.2 mW (max) : 0.