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MC-4R64FKE8S - Direct Rambus DRAM SO-RIMM Module

General Description

The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking systems, and other applications where high bandwidth and low latency are required.

Key Features

  • 160 edge connector pads with 0.65mm pad spacing.
  • 64MB Direct RDRAM storage.
  • Each RDRAM has 32 banks, for 64 banks total on module.
  • Gold plated contacts.
  • RDRAMs use Chip Scale Package (CSP).
  • Serial Presence Detect support.
  • Operates from a 2.5V supply.
  • Powerdown self refresh modes.
  • Separate Row and Column buses for higher efficiency Document No. E0140N30 (Ver. 3.0) Date Published June 2002 (K) Japan URL: http://www.

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Datasheet Details

Part number MC-4R64FKE8S
Manufacturer Elpida Memory
File Size 124.54 KB
Description Direct Rambus DRAM SO-RIMM Module
Datasheet download datasheet MC-4R64FKE8S Datasheet

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Full PDF Text Transcription (Reference)

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DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S (32M words × 18 bits) Description The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking systems, and other applications where high bandwidth and low latency are required. MC-4R64FKE8S modules consists of two 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.