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UPD4516161D - 16M Bit Synchronous DRAM

General Description

The µPD4516161D is high-speed 16,777,216-bit synchronous dynamic random-access memory, organized as 524,288 words × 16 bits × 2 banks respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge.
  • Pulsed interface.
  • Possible to assert random column address in every cycle.
  • Dual internal banks controlled by A11.
  • Byte control by LDQM and UDQM.
  • Programmable Wrap sequence: Sequential / Interleave.
  • Programmable burst length: 1, 2, 4, 8 and full page.
  • /CAS latency: 3.
  • CBR (Auto) refresh and self refresh.
  • ×16 organization.

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Datasheet Details

Part number UPD4516161D
Manufacturer Elpida
File Size 442.43 KB
Description 16M Bit Synchronous DRAM
Datasheet download datasheet UPD4516161D Datasheet

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4516161D 16M-bit Synchronous DRAM 2-banks, LVTTL Description The µPD4516161D is high-speed 16,777,216-bit synchronous dynamic random-access memory, organized as 524,288 words × 16 bits × 2 banks respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL). This product is packaged in 50-pin TSOP (II).