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EM620FV8B - 256K x 8 bit Low Power and Low Voltage Full CMOS Static RAM

General Description

Name CS1,CS2 OE WE A0~A17 I/O0~I/O7 Function Chip select inputs Output Enable input Write Enable input Address Inputs Data Inputs/Outputs Name Vcc Vss NC Function Power Supply Ground No Connection A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 VCC Row Select VSS Memory Array 1024 x 2048 I/O0 ~ I/O7 Data Cont

Key Features

  • - Process Technology : 0.15µm Full CMOS - Organization :256K x8 - Power Supply Voltage => EM620FV8B : 2.7~3.6V - Low Data Retention Voltage : 1.5V - Three state output and TTL Compatible - Packaged product designed for 45/55/70ns.

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Datasheet Details

Part number EM620FV8B
Manufacturer Emerging Memory & Logic Solutions
File Size 454.92 KB
Description 256K x 8 bit Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet EM620FV8B Datasheet

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Part Number Description
EM620FV8BT 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EM620FV8B Series Low Power, 256Kx8 SRAM Document Title 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. 0.0 0.1 0.2 0.3 History Initial Draft 0.1 Revision 0.2 Revision 0.3 Revision Remove BYTE option information Remove UB, LB information Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns), tOE-55(30ns to 25ns), tWP-55(45ns to 40ns), tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns), ICC(2mA to 3mA), ICC1(2mA to 3mA) VIH level change from 2.0V to 2.2V Draft Date June 7, 2007 June 15, 2007 June 21, 2007 July 2, 2007 Remark 0.4 0.4 Revision Aug. 16, 2007 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.