EM641FT8
FEATURES
- Very high speed : 45ns
- Process Technology : 0.15um Full CMOS
- Organization : 512K x8
- Power Supply Voltage => EM641FT8V : 4.5V~5.5V
- Low Data Retention Voltage :1.5V (MIN)
- Three state output and TTL patible ..
- Packaged product designed for 45/55/70ns
- KGD based on SOP package structure
Low Power, 512Kx8 SRAM
GENERAL PHYSICAL SPECIFICATIONS
- Backside die surface of polished bare silicon
- Typical Die Thickness = 725um +/-15um
- Typical top-level metallization : => Metal (Ti/Al Cu/Ti N/ARC Si ON/Si O2) : 5.2K Angstroms
- Topside Passivation : => Passivation (HDP/p NIT/PIQ) : 5.4K Angstroms
- Typical Pad Size : 76.0um x 80.0um
- Wafer diameter : 8 inch
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10
VCC VSS
Row Select
Memory Array 512K x 8
I/O0 ~ I/O7
Data Cont
I/O Circuit Column Select
A11 A12 A13 A14 A15 A16 A17 A18
WE OE CS
Control Logic
Name CS OE WE A0~A18 I/O0~I/O7
Function Chip select input Output Enable input Write...
