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EM610FV8T Datasheet PDF

Emerging Memory - Logic Solutions EM610FV8T

The EM610FV8T families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.
Part No. EM610FV8T
Datasheet EM610FV8T Download
Manufacturer Emerging Memory - Logic Solutions
Description 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
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EM610FV8T datasheet page 1 preview

FEATURES

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● Process Technology : 0.18µ m Full CMOS Organization : 128K x 8 bit Power Supply Voltage : 2.7V ~ 3.6V Low Data Retention Voltage : 1.5V(Min) Three state output and TTL Compatible Package Type : 32-TSOP1 EM610FV8T Series Low Power, 128Kx8 SRAM

GENERAL DESCRIPTION

PRODUCT FAMILY Power Dissipation Product Family EM610FV8T Operating Temperature Industrial (-40 ~ 85o C) Vcc Range Speed Standby (ISB1 , Typ) 0.5 µA2) Operating (I CC1.Max) 3 mA PKG Type 32-TSOP1 2.7V~3.6V 551) / 70ns 1. The parameter is measured with 30pF test load. 2. Typical values are measured at Vcc=3.3V, TA=25 oC and not 100% tested. PIN

DESCRIPTION

A11 A9 A8 A13 WE CS2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 OE A10 CS1 IO8 IO7 IO6 IO5 IO4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 FUNCTIONAL BLOCK DIAGRAM Pre-charge Circuit 23 22 21 20 19 18 17 Row S elect 32 - TSOP Type1 - Forward 26 25 24 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 VC C VSS Memory Array 1024 x 1024 I/O1 ~...