EM640FV16FW Overview
EM640FV16FW Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Initial Draft Draft Date August 13 , 2003 Remark Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel.
EM640FV16FW Key Features
- Process Technology : 0.18µm Full CMOS
- Organization :256K x16
- Power Supply Voltage => EM640FV16FW : 2.7~3.6V
- Three state output and TTL patible
- Packaged product designed for 55/70ns GENERAL PHYSICAL SPECIFICATIONS
- Backside die surface of polished bare silicon
- Typical Die Thickness = 725um
- Typical top-level metalization : => Metal ( Ti/TiN/Al-Cu 0.5% ) : 5.7K Angstroms thickness
- Topside Passivation : => 7K Angstroms PE-SiN
- Typical Pad Size : 90.0um x 80.0um