EM641FT8 Datasheet | Emerging Memory - Logic Solutions

FEATURES - Very high speed : 45ns - Process Technology : 0.15um Full CMOS - Organization : 512K x8 - Power Supply Voltage => EM641FT8V : 4.5V~5.5V - Low Data Retention Voltage :1.5V (MIN) - Three state output and TTL patible .. - Packaged product designed for 45/55/70ns - KGD based on SOP package structure Low Power, 512Kx8 SRAM GENERAL PHYSICAL SPECIFICATIONS - Backside die surface of polished bare silicon - Typical Die Thickness = 725um +/-15um - Typical top-level metallization : => Metal (Ti/Al Cu/Ti N/ARC Si ON/Si O2) : 5.2K Angstroms - Topside Passivation : => Passivation (HDP/p NIT/PIQ) : 5.4K Angstroms - Typical Pad Size : 76.0um x 80.0um - Wafer diameter : 8 inch FUNCTIONAL BLOCK DIAGRAM Pre-charge Circuit A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 VCC VSS Row Select Memory Array 512K x 8 I/O0 ~ I/O7 Data Cont I/O Circuit Column Select A11 A12 A13 A14 A15 A16 A17 A18 WE OE CS Control Logic Name CS OE WE A0~A18 I/O0~I/O7 Function Chip select input Output Enable input Write Enable input Address Inputs Data Inputs/Outputs Name VCC VSS Function Power Supply Ground ABSOLUTE MAXIMUM RATINGS Parameter Voltage on Any Pin Relative to VSS Voltage on Vcc supply relative to VSS Power Dissipation Operating Temperature .. Low Power, 512Kx8 SRAM Symbol VIN, VOUT VCC PD...