EM646FV16FU Datasheet | Emerging Memory - Logic Solutions

FEATURES - - - - - - Process Technology : 0.18µ m Full CMOS Organization : 256K x 16 bit Power Supply Voltage : 2.7V ~ 3.6V Low Data Retention Voltage : 1.5V(Min.) Three state output and TTL patible Package Type : 44 TSOP2 EM646FV16FU Series Low Power, 256Kx16 SRAM GENERAL DESCRIPTION The EM646FV16FU families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. .. PRODUCT FAMILY Power Dissipation Product Family EM646FV16FU Operating Temperature Industrial (-40 ~ 85 o C) Vcc Range Speed Standby (ISB1 , Min.) 1 µA2 ) Operating (ICC1.Max.) 3 m A PKG Type 2.7V~3.6V 551)/70ns 44-TSOP2 1. The parameter is measured with 30p F test load. 2. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested. PIN DESCRIPTION FUNCTIONAL BLOCK DIAGRAM A4 A3 A2 A1 A0 CS1 I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 CS2 A8 A9 A10 A11 A12 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 Pre-charge Circuit VC C Row S elect Memory Array 2048 x 2048 - TSOP2 35 34 33 32 31 30 29 28 27 26 25 24 23 I/O1 ~ I/O8 I/O9 ~ I/O16 Data Cont Data Cont I/O Circuit Column Select A 11 A 12 A 13 A 14 A 15 A 16 A 17 48-FPBGA : Top view (ball down) W E O E UB LB Control Logic Name CS1 ,CS 2 OE WE A 0 ~A17 Function Chip select inputs Output Enable input Write Enable input Address Inputs Name Vcc Vss UB LB NC Function Power Supply Ground Upper Byte (I/O 9~16) Lower Byte (I/O 1~8 ) No...