EN29F010
EN29F010 is manufactured by Elite Semiconductor Microelectronics Technology.
EN29F010 1 Megabit (128K x 8-bit) 5V Flash Memory
Features
- 5.0V operation for read/write/erase operations
- Fast Read Access Time
- 45ns, 55ns, 70ns, and 90ns
- Sector Architecture:
- 8 uniform sectors of 16Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
- High performance program/erase speed
- Byte program time: 7µs typical
- Sector erase time: 300ms typical
- Chip erase time: 3s typical
- Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
- Low Power Active Current
- 12mA typical active read current
- 30mA...
