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EN29F010 Datasheet 1 Megabit (128k X 8-bit) 5v Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: EN29F010 1 Megabit (128K x 8-bit) 5V Flash Memory EN29F010.

General Description

The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform sectors of 16Kbytes each.

Any byte can be programmed typically in 7µs.

Key Features

  • 5.0V operation for read/write/erase operations.
  • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns.
  • Sector Architecture: - 8 uniform sectors of 16Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors.
  • High performance program/erase speed - Byte program time: 7µs typical - Sector erase time: 300ms typical - Chip erase time: 3s.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
EN29F512 512 Kbit (64K x 8-bit) 5V Flash Memory
EN29GL064 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory
EN29LV010 CMOS 3.0 Volt-only Flash Memory
EN29LV040A CMOS 3.0 Volt-only Flash Memory
EN29LV160 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory
EN29LV160A 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory
EN29LV160B 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory
EN29LV160J 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory
EN29LV320 32M Flash Memory Boot Sector Flash Memory
EN29LV320A 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory

EN29F010 Distributor