Datasheet Details
| Part number | EN29F010 |
|---|---|
| Manufacturer | ESMT (Elite Semiconductor Microelectronics Technology) |
| File Size | 424.22 KB |
| Description | 1 Megabit (128K x 8-bit) 5V Flash Memory |
| Datasheet |
 EN29F010 Datasheet
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General Description
The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform sectors of 16Kbytes each.
Any byte can be programmed typically in 7µs.
Key Features
- 5.0V operation for read/write/erase operations.
- Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns.
- Sector Architecture: - 8 uniform sectors of 16Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors.
- High performance program/erase speed - Byte program time: 7µs typical - Sector erase time: 300ms typical - Chip erase time: 3s.