EN29LV800C
Description
The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs.
Key Features
- Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.
- High performance - Access times as fast as 70 ns
- Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - 1 μA typical standby current (standard access time to active mode)
- Flexible Sector Architecture: - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode) - One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode)
- High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 100ms typical
- Sector protection: - Hardware locking of sectors to prevent program or erase operations within individual sectors - Additionally, temporary Sector Unprotect allows code changes in previously locked sectors.
- JEDEC Standard Embedded Erase and Program Algorithms
- JEDEC standard DATA# polling and toggle bits feature
- Single Sector and Chip Erase
- Sector Unprotect Mode
