EN25F40 Datasheet | Elite Semiconductor Microelectronics Technology

FEATURES - Single power supply operation - Full voltage range: 2.7-3.6 volt - 4 Mbit Serial Flash - 4 M-bit/512 K-byte/2048 pages - 256 bytes per programmable page - High performance - 100MHz clock rate - Low power consumption - 5 m A typical active current - 1 μA typical power down current - Uniform Sector Architecture: 128 sectors of 4-Kbyte 8 blocks of 64-Kbyte Any sector or block can be erased individually - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin - High performance program/erase speed Page program time: 1.5ms typical Sector erase time: 150ms typical Block erase time 800ms typical Chip erase time: 5 Seconds typical - Lockable 256 byte OTP security sector - Minimum 100K endurance cycle - Package Options 8 pins SOP 150mil body width 8 pins SOP 200mil body width 8 contact VDFN 8 pins PDIP All Pb-free packages are Ro HS pliant - Software and Hardware Write Protection: - mercial and industrial temperature Range GENERAL DESCRIPTION The EN25F40 is a 4M-bit (512K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-patible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F40 is designed to allow either single Sector at a time or full chip erase operation. The EN25F40 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector. This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., .essi..tw Rev. B, Issue Date: 2007/05/09 .. Figure.1 CONNECTION DIAGRAMS - LEAD SOP / PDIP - CONTACT VDFN Figure 2. BLOCK DIAGRAM This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., .essi..tw Rev. B, Issue Date:...