Datasheet Summary
4Gb (64M× 8Bank×8) Double DATA RATE 3 low voltage SDRAM
Features
- JEDEC Standard VDD/VDDQ = 1.5V±0.075V
- All inputs and outputs are patible with SSTL_15 interface.
- Fully differential clock inputs (CK, /CK) operation.
- Eight Banks
- Posted CAS by programmable additive latency
- Bust length: 4 with Burst Chop (BC) and 8.
- CAS Write Latency (CWL): 5, 6, 7, 8
- CAS Latency (CL): 6, 7, 8, 9, 10, 11
- Write Latency (WL) =Read Latency (RL) -1.
- Bi-directional Differential Data Strobe (DQS).
- Data inputs on DQS centers when write.
- Data outputs on DQS, /DQS edges when read.
- On chip DLL align DQ, DQS and /DQS transition with CK transition.
- DM mask write data-in at the...