| Part number | PTB20079 |
|---|---|
| Datasheet | PTB20079_Ericsson.pdf |
| File Size | 184.58 KB |
| Manufacturer | Ericsson |
| Description | 10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor |
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The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, mon emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability.
| Part Number | Description |
|---|---|
| PTB20074 | 14 watts/ 1.477-1.501 GHz Cellular Radio RF Power Transistor |
| PTB20077 | 0.7 Watts/ 1525-1660 MHz INMARSAT RF Power Transistor |
| PTB20078 | 2.5 Watts/ 1525-1660 MHz INMARSAT RF Power Transistor |
| PTB20003 | 4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor |
| PTB20004 | 50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20005 | 15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20006 | 4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20007 | 30 Watts/ 935-960 MHz Cellular Radio RF Power Transistor |
| PTB20008 | 10 Watts/ 935-960 MHz Cellular Radio RF Power Transistor |
| PTB20009 | 2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor |
