PTB20079 - 10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor

Datasheet Summary

Description

The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band.

It is rated at 10 Watts minimum output power for PEP applications.

Ericsson

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Datasheet Details

Part number	PTB20079
Manufacturer	Ericsson
File Size	184.58 KB
Description	10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor
Datasheet	PTB20079 Datasheet
Additional preview pages of the PTB20079 datasheet.

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e PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts, 1.6–1.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 16 +24V 14 +26V +22V Output Power (Watts) 12 10 8 6 4 2 0 0.00 2007 9 LOT COD E f = 1.65 GHz ICQ = 100 mA 0.50 1.00 1.50 2.

Published: Apr 16, 2005 |