Datasheet Summary
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PTB 20187 4 Watts, 1.8- 2.0 GHz Cellular Radio RF Power Transistor
Description
The 20187 is a class AB, NPN, mon emitter RF power transistor intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
4 Watts, 1.80- 2.00 GHz Class AB Characteristics 30% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power vs. Input Power
Output Power...