PTB20187 - 4 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

Datasheet Summary

Description

The 20187 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.80 to 2.00 GHz.

Rated at 4 watts minimum output power, it may be used for both CW and PEP applications.

Ericsson

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Datasheet Details

Part number	PTB20187
Manufacturer	Ericsson
File Size	43.43 KB
Description	4 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
Datasheet	PTB20187 Datasheet
Additional preview pages of the PTB20187 datasheet.

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e PTB 20187 4 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20187 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 4 Watts, 1.80–2.00 GHz Class AB Characteristics 30% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 6 Output Power (Watts) 5 4 201 87 LO TC OD E VCC = 26 V 3 ICQ = 50 mA f = 1.8-2.0 GHz 2 0.0 0.2 0.4 0.6 0.

Published: Apr 16, 2005 |