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PTF10009 - 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor

General Description

The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz.

It operates at 50% efficiency and 13.0 dB of gain.

Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability.

Performance at 960 MHz

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Datasheet Details

Part number PTF10009
Manufacturer Ericsson
File Size 228.56 KB
Description 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10009 Datasheet

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PTF 10009 85 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% lot traceability • • • • Typical Output Power and Efficiency vs. Input Power 100 90 Output Power (W) 80 70 60 50 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.