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PTF10020 - 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

Datasheet Summary

Description

The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz.

Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.

INTERNAL

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Datasheet Details

Part number PTF10020
Manufacturer Ericsson
File Size 313.73 KB
Description 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10020 Datasheet
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PTF 10020 125 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Typical Output Power vs. Input Power 150 960 MHz Output Power (Watts) 125 100 75 860 MHz 50 900 MHz A-1 100 20 234 569 813 VDD = 28 V 25 0 0 1 2 3 4 5 6 7 IDQ = 1.
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