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PTF10053 - 12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor

Datasheet Summary

Description

The PTF 10053 is a 12

watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz.

It operates at 40% efficiency with 12 dB typical gain.

Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

Guaranteed Performance

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Datasheet Details

Part number PTF10053
Manufacturer Ericsson
File Size 81.08 KB
Description 12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10053 Datasheet
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PTF 10053 12 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 12 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power & Efficiency vs. Input Power 16 14 Efficiency 50 45 Efficiency (%) X 40 35 Output Power 8 6 30 25 Output Power (Watts) 12 10 A-1 100 2 3 4 53 569 911 VDD = 26 V 4 2 0 0.0 0.5 1.0 1.5 2.
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