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PTF10065 - 30 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor

General Description

The PTF 10065 is a 30

watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz.

It typically operates with 11 dB gain.

Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

INTERNALLY MATCHED Guaran

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Datasheet Details

Part number PTF10065
Manufacturer Ericsson
File Size 94.89 KB
Description 30 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10065 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 30 Watts Min - Power Gain = 11.0 dB Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability • • • • Output Power and Efficiency vs. Input Power 40 Output Power 80 70 60 Efficiency 20 Output Power (Watts) 30 Efficiency 50 40 e 065 123 456 992 1A 10 VDD = 28 V 10 30 20 10 0 IDQ = 380 mA f = 1.