PTF10135
PTF10135 is 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor manufactured by Ericsson.
Description
The PTF 10135 is a mon source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100% lot traceability is standard.
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 d B Min Gold Metallization Silicon Nitride Passivated Back Side mon Source Excellent Thermal Stability
Typical Output Power vs. Input Power
8 7
Output Power (Watts)
6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5
A-1 234 569 953
VDD = 26 V IDQ = 70 m A f = 2000 MHz
Input Power (Watts)
Package 20249
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG Rq JC
Symbol
VDSS VGS TJ PD
Value
65 ±20 200 39 0.22
- 40 to +150 4.5
Unit
Vdc Vdc °C Watts W/°C °C °C/W e
PTF 10135
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance e
Conditions
VGS = 0 V, ID = 5 m A VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 m A VDS = 10 V, ID = 2 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
- 3.0
- Typ
- -...
