Datasheet4U Logo Datasheet4U.com

PTF10160 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

Datasheet Summary

Description

The PTF 10160 is an internally matched 85

watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications.

It operates with 53% efficiency and 16 dB typical gain.

Full gold metallization ensures excellent device lifetime and reliability.

INTERNALLY MATCHED Perfo

📥 Download Datasheet

Datasheet preview – PTF10160

Datasheet Details

Part number PTF10160
Manufacturer Ericsson
File Size 253.12 KB
Description 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10160 Datasheet
Additional preview pages of the PTF10160 datasheet.

📁 Similar Datasheet

  • PTF102003 - PUSH/PULL LATERAL MOSFET (PEAK)
  • PTF11A - Relay (Omron)
  • PTF13005 - NPN Silicon Power Transistor (Wing On)
  • PTF14A-E - Relay (Omron)
  • PTF180101 - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz (Infineon Technologies AG)
  • PTF180101S - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz (Infineon Technologies AG)
  • PTF180601 - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)
  • PTF180601C - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)
  • PTF180601E - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)
  • PTF180901E - GSM/EDGE RF Power FET (Infineon Technologies AG)
Other Datasheets by Ericsson
  • PTF10161 - 165 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor
  • PTF10162 - 18 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
  • PTF10100 - 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
  • PTF10107 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
  • PTF10111 - 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor
  • PTF10112 - 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
  • PTF10119 - 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
  • PTF10120 - 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability. • • INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power = 85 Watts - Power Gain = 16 dB Typ - Efficiency = 53% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability • • • • Typical Output Power& Efficiency vs.
Published: |