EBRP10L45T Datasheet | Eris Technology

TO-277 Features ‧Schottky barrier diodes ‧Low forward voltage drop ‧Low leakage current ‧Moisture sensitivity: level 1, per J-STD-020 ‧Solder dip 260 °C, 10 s ‧Low profile ‧Heatsink design Ordering Information Part No. EBRP10L45T EBRP10L45T-H Remark General Halogen Free Package TO-277 Packing 5000 / Reel Maximum Ratings (TA=25°C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage VRMS Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load IFSM Maximum Instantaneous Forward Voltage IF=5A @ 25°C IF=10A @ 25°C Maximum DC Reverse Current @ TA=25°C at Rated DC Blocking Voltage @ TA=125°C Typical Junction Capacitance(NOTE1) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Marking Code Cj RθJC TJ TSTG NOTES: 1.Measured at 1.0MHZ and applied reverse voltage of 4.0V DC Excellent Schottky Barrier Rectifiers Primary Characteristics...