Eris LFMND0P7
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | LFMND0P7 |
|---|---|
| Datasheet | LFMND0P7 Download |
| Manufacturer |  Eris |
| Description | 40V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. LFPAK8080 Pin Configuration D G S 40V N-Channel MOSFETs BVDSS 40 V RDS(ON) 0.7 mΩ ID 455 AFEATURES
●RDS(ON)≦0.7mΩ@VGS=10V●Improved dv/dt Capability
●Fast Switching
●Green Device Available
APPLICATIONS
●DC-DC Converters●Body Control Electronics
●LED Lighting Ordering Information Part No. Remark LFMND0P7 Halogen Free LFMND0P7-A AEC-Q101 qualified (NOTE 1) Package LFPAK8080
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current - Continuous (TC=25oC) IDM Drain Current - Pulsed (NOTE 2) EAS Single Pulse Avalanche Energy (L=0.1mH) IAS PD TJ TSTG Single Pulse Avalanche Current (L=0.1mH) Power Dissipation (TC=25oC) Operating Junction Temperature Range Storage Temperature Range Marking Code Thermal Characteristics Symbol Parameter RθJA Thermal Resistance Junction to Ambient RθJC Thermal Resis...
