LFMND0P7
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
LFPAK8080 Pin Configuration
40V N-Channel MOSFETs
BVDSS 40 V
RDS(ON) 0.7 mΩ
ID 455 A
Features
‧RDS(ON)≦0.7mΩ@VGS=10V ‧Improved dv/dt Capability ‧Fast Switching ‧Green Device Available
Applications ‧DC-DC Converters ‧Body Control Electronics ‧LED Lighting
Ordering Information
Part No.
Remark
Halogen Free
LFMND0P7-A AEC-Q101 qualified (NOTE 1)
Package LFPAK8080
Absolute Maximum Ratings TC=25o C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous (TC=25o C)
Drain Current
- Pulsed (NOTE 2)
Single...
