Eris MMBD1503A
High Conductance Low Leakage Diode
FEATURES
●Two element incorporated into one package. (Emitter-coupled transistors)●Reduction of the mounting area and assembly cost by one half.
●For general application
●Pb-Free package is available
●RoHS product for packing code suffix "G"
●Halogen free product for packing code suffix "H"
●Moisture Sensitivity Level 1 MARKING: MMBD1501A MMBD1503A MMBD1504A MMBD1505A A11 A13 A14 A15 Revision: B01 MMBD1501A~MMBD1505A High Conductance Low Leakage Diode
MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Characteristic Reverse Voltage Average Rectified Current Forward Continuous Current Peak Forward Current @t=1.0μs @t=1.0s Power Dissipation Thermal Resistance from Junction to Ambient Operating/ Junction and Storage Temperature Range Symbol VR VF(AV) IFM IFSM PD RθJA TJ, TSTG Value 200 200 700 1 2 350 357 -55~+150 Unit V mA mA A mW °C/W °CELECTRICAL CHARACTERISTICS
(TA=25°C