P3MPC8P5 - 30V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

‧-30V, -50A, RDS(ON)=8.5mΩ@VGS= -10V ‧Fast switching ‧Green Device Available ‧Suit for -4.5V Gate Drive.

Eris

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Datasheet Details

Part number	P3MPC8P5
Manufacturer	Eris
File Size	0.98 MB
Description	30V P-Channel MOSFET
Datasheet	P3MPC8P5 Datasheet
Additional preview pages of the P3MPC8P5 datasheet.

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P3MPC8P5 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration DDDD D S S SG G S 30V P-Channel MOSFETs BVDSS -30 V RDS(ON) 8.5 mΩ ID -50 A Features ‧-30V, -50A, RDS(ON)=8.5mΩ@VGS= -10V ‧Fast switching ‧Green Device Available ‧Suit for -4.

Published: Oct 20, 2025 |