P3MPC8P5
Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK3X3 Pin Configuration
DDDD
S S SG
30V P-Channel MOSFETs
BVDSS -30 V
RDS(ON) 8.5 mΩ
ID -50 A
Features
‧-30V, -50A, RDS(ON)=8.5mΩ@VGS= -10V ‧Fast switching ‧Green Device Available ‧Suit for -4.5V Gate Drive Applications
Applications ‧MB / VGA / VCORE ‧POL Applications ‧LED Application ‧Load Switch
Absolute Maximum Ratings TC=25o C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous (TC=25o C) Drain Current
- Continuous (TC=100o C)
Drain Current
- Pulsed (NOTE 1)
Power Dissipation (TC=25o C) Power...
