Eris P5MND2P8
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | P5MND2P8 |
|---|---|
| Datasheet | P5MND2P8 Download |
| Manufacturer |  Eris |
| Description | 40V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. 40V N-Channel MOSFETs BVDSS 40V RDS(ON) 2.8mΩ ID 100AFEATURES
●40V, 100A, RDS(ON)=2.8mΩ@VGS=10V●Fast switching
●Improved dv/dt capability
●Green Device Available PPAK5X6 Pin Configuration D DD D D GG SSS S
APPLICATIONS
●MB / VGA / Vcore●POL
APPLICATIONS
●SMPS 2nd SRABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25oC) Drain Current - Continuous (TC=100oC) Drain Current - Pulsed (NOTE 1) Single Pulse Avalanche Energy (NOTE 2) IAS Single Pulse Avalanche Current (NOTE 2) PD Power Dissipation (TC=25oC) Power Dissipation - Derate above 25oC TJ TSTG Marking Code Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Symbol Parameter RθJA Thermal Resistance Junction to Ambient RθJC Thermal Resistance Junction to Case Rating 40 ±20 100 63 400 312 79 135 1.08 -50 to 150 -50 to 150 ND2P8 Units V V A A A mJ A W W/oC oC oC Typ.
