P5MND2P8 - 40V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

‧40V, 100A, RDS(ON)=2.8mΩ@VGS=10V ‧Fast switching ‧Improved dv/dt capability ‧Green Device Available PPAK5X6 Pin Configuration D DD D D GG SSS S.

Eris

📥 Download Datasheet

Datasheet Details

Part number	P5MND2P8
Manufacturer	Eris
File Size	934.89 KB
Description	40V N-Channel MOSFET
Datasheet	P5MND2P8 Datasheet
Additional preview pages of the P5MND2P8 datasheet.

📁 Similar Datasheet

P5MD - Apple iPhone5S data line IC (FUMAN)

Other Datasheets by Eris

P5MNG4P4 - 65V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

P5MND2P8 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 40V N-Channel MOSFETs BVDSS 40V RDS(ON) 2.8mΩ ID 100A Features ‧40V, 100A, RDS(ON)=2.

Published: Oct 20, 2025 |