Datasheet4U Logo Datasheet4U.com

P5MND2P8 - 40V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • ‧40V, 100A, RDS(ON)=2.8mΩ@VGS=10V ‧Fast switching ‧Improved dv/dt capability ‧Green Device Available PPAK5X6 Pin Configuration D DD D D GG SSS S.

📥 Download Datasheet

Datasheet Details

Part number P5MND2P8
Manufacturer Eris
File Size 934.89 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet P5MND2P8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
P5MD Apple iPhone5S data line IC FUMAN

Other Datasheets by Eris

Part Number Description
P5MNG4P4 65V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P5MND2P8 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 40V N-Channel MOSFETs BVDSS 40V RDS(ON) 2.8mΩ ID 100A Features ‧40V, 100A, RDS(ON)=2.