P5MND2P8
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
40V N-Channel MOSFETs
BVDSS 40V
RDS(ON) 2.8mΩ
ID 100A
Features
‧40V, 100A, RDS(ON)=2.8mΩ@VGS=10V ‧Fast switching ‧Improved dv/dt capability ‧Green Device Available
PPAK5X6 Pin Configuration
D DD D
Applications ‧MB / VGA / Vcore ‧POL Applications ‧SMPS 2nd SR
Absolute Maximum Ratings TC=25o C unless otherwise noted
Symbol
Parameter
VDS VGS
IDM EAS
Drain-Source Voltage
Gate-Source Voltage Drain Current
- Continuous (TC=25o C) Drain Current
- Continuous (TC=100o C) Drain Current
- Pulsed (NOTE 1)
Single Pulse Avalanche Energy (NOTE 2)
Single Pulse Avalanche Current (NOTE...
