S8MBG036 - 60V N+P Dual Channel MOSFET

Datasheet Summary

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

‧Fast Switching ‧Green Device Available SOP-8 Pin Configuration D2D2 D1 D1 G1 S1G1S2G2 D1 D2 G2 S1 S2 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current - Continuous (TA=25oC) IDM Drain Current - Pulsed (NOTE 1) PD Power Dissipation (TA=25oC) TJ Operating Junction Temperature Range TSTG Storage Temperature Range Marking Code.

Eris

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Datasheet Details

Part number	S8MBG036
Manufacturer	Eris
File Size	163.79 KB
Description	60V N+P Dual Channel MOSFET
Datasheet	S8MBG036 Datasheet
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Full PDF Text Transcription

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S8MBG036 60V N+P Dual Channel MOSFETs General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 60 V -60 V RDS(ON) 36 mΩ 70 mΩ ID 12.5 A -9.

Published: Aug 24, 2025 |