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S8MBG036 - 60V N+P Dual Channel MOSFET

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Eris

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S8MBG036 60V N+P Dual Channel MOSFET by Eris - Datasheet Preview — Datasheet preview – S8MBG036

Datasheet Details

Part number	S8MBG036
Manufacturer	Eris
File Size	163.79 KB
Description	60V N+P Dual Channel MOSFET
Datasheet	S8MBG036 Datasheet
Additional preview pages of the S8MBG036 datasheet.

Product details

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

‧Fast Switching ‧Green Device Available SOP-8 Pin Configuration D2D2 D1 D1 G1 S1G1S2G2 D1 D2 G2 S1 S2 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current - Continuous (TA=25oC) IDM Drain Current - Pulsed (NOTE 1) PD Power Dissipation (TA=25oC) TJ Operating Junction Temperature Range TSTG Storage Temperature Range Marking Code.

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Published: Aug 24, 2025 |