S8MBG036 Datasheet 60V N+P Dual Channel MOSFET

Manufacturer: Eris

S8MBG036 60v n+p dual channel mosfet by Eris - Datasheet Preview

Datasheet Details

Part number	S8MBG036
Manufacturer	Eris
File Size	163.79 KB
Description	60V N+P Dual Channel MOSFET
Download	S8MBG036 Download (PDF)

General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

S8MBG036 60V N+P Dual Channel MOSFETs General.

Key Features

‧Fast Switching ‧Green Device Available SOP-8 Pin Configuration D2D2 D1 D1 G1 S1G1S2G2 D1 D2 G2 S1 S2 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current - Continuous (TA=25oC) IDM Drain Current - Pulsed (NOTE 1) PD Power Dissipation (TA=25oC) TJ Operating Junction Temperature Range TSTG Storage Temperature Range Marking Code.

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