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TNMNG30H
60V N-Channel MOSFET
D
G
S
SOT-23
Features
‧RDS(ON) ≦3Ω@VGS=10V ‧RDS(ON) ≦3.2Ω@VGS=4.5V ‧High Density Cell Design For Ultra Low
On-Resistance ‧Very Low Leakage Current In Off Condition ‧ESD Protected 2KV HBM
BVDSS RDS(ON)
ID
60 V 3 Ω 320 mA
Mechanical Data
‧Case：SOT-23 ‧Marking：K72
Ordering Information
Part No.
Remark
TNMNG30H
RoHS Compliant
TNMNG30H-H
Halogen Free
TNMNG30H-Q
AEC-Q101 qualified
Package SOT-23
Packing 3000 / Tape & Reel
Maximum Ratings (TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Pulsed Drain Current (NOTE 1) Total Power Dissipation (NOTE 3) Junction and Storage Temperature Range Typical Thermal Resistance NOTE： 1.Maximum DC current limited by the package 2.
TNMNG30H Datasheet
