TUMNF16H Datasheet | Eris Technology

Features ‧55V, 0.36A, RDS(ON)=1.6Ω@VGS=10V ‧ESD Protected ‧Fast switching ‧Green Device Available 55V N-Channel MOSFETs BVDSS 55 V RDS(ON) 1.6 Ω ID 360 m A Applications ‧Case：SOT-363 ‧Load Switch ‧Hand-Held Instruments Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter VDS VGS ID IDM PD TJ TSTG Marking Code Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Drain Current - Pulsed Total Power Dissipation (TA=25o C) (NOTE 1) Operating Junction Temperature Range Storage Temperature Range NOTES： 1.1- MRP FR-4 PC board,2oz. Rating 55 ±20 360 1200 275 -50 to 150 -50 to 150 E38 , D8 Units V V m A m A m W o C o C Thermal Characteristics Symbol Parameter RθJA Thermal Resistance Junction to Ambient Typ. Max Unit --- 450 o C/W Revision: B04 DC-01343 1/5 .eris..tw 55V N-Channel MOSFETs Electrical Characteristics (TJ=25o C, unless otherwise noted) Off Characteristics Symbol Parameter Conditions BVDSS IDSS IGSS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current VGS=0V , ID=10u A VDS=55V , VGS=0V VGS=±20V ,...