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TVMNG30H - 60V N-Channel MOSFET

Key Features

  • ‧RDS(ON) ≦3Ω@VGS=10V ‧RDS(ON) ≦4Ω@VGS=4.5V ‧High Density Cell Design For Ultra Low On-Resistance ‧Very Low Leakage Current In Off Condition ‧ESD Protected 2KV HBM Ordering Information Part No. Remark TVMNG30H General TVMNG30H-H Halogen Free Package SOT-883 Maximum Ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Pulsed Drain Current (NOTE 1) Power Dissipation Junction and Storage Temperature Range Typical Thermal Resistance NOT.

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Datasheet Details

Part number TVMNG30H
Manufacturer Eris
File Size 647.38 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet TVMNG30H Datasheet

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TVMNG30H 60V N-Channel MOSFET S G D SOT-883 Features ‧RDS(ON) ≦3Ω@VGS=10V ‧RDS(ON) ≦4Ω@VGS=4.5V ‧High Density Cell Design For Ultra Low On-Resistance ‧Very Low Leakage Current In Off Condition ‧ESD Protected 2KV HBM Ordering Information Part No. Remark TVMNG30H General TVMNG30H-H Halogen Free Package SOT-883 Maximum Ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Pulsed Drain Current (NOTE 1) Power Dissipation Junction and Storage Temperature Range Typical Thermal Resistance NOTE： 1.Maximum DC current limited by the package 2.Pulse test：pulse width≦ 300us, duty cycle≦ 2.0%. D S G S Mechanical Data ‧Case：SOT-883 ‧Marking：X1 Symbol VDSS VGSS ID IDM PD TJ , TSTG RθJA Limit 60 ±20 300 1.