TVMNG30H
Features
‧RDS(ON) ≦3Ω@VGS=10V ‧RDS(ON) ≦4Ω@VGS=4.5V ‧High Density Cell Design For Ultra Low
On-Resistance ‧Very Low Leakage Current In Off Condition ‧ESD Protected 2KV HBM
Ordering Information
Part No.
Remark
General
TVMNG30H-H
Halogen Free
Package SOT-883
Maximum Ratings (TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Pulsed Drain Current (NOTE 1) Power Dissipation Junction and Storage Temperature Range Typical Thermal Resistance NOTE： 1.Maximum DC current limited by the package 2.Pulse test：pulse width≦ 300us, duty cycle≦ 2.0%.
Mechanical Data
‧Case：SOT-883 ‧Marking：X1
Symbol VDSS VGSS ID IDM PD
TJ , TSTG RθJA
Limit 60 ±20 300 1.8 350
-55~150 357
Unit V V m A A m W o C o C/W
Revision: B03
DC-01280 1/5
.eris..tw
60V N-Channel MOSFET
Electrical Characteristics (TA=25°C unless otherwise noted)
Parameter
Conditions
Static
Drain-source breakdown voltage Gate-threshold voltage
Drain-Source...
